陈卓俊，湖南大学教授，博士生导师。湖南省“湖湘青年英才”，湖南省青年骨干教师培养对象，获得湖南大学优秀教师新人奖。IEEE高级会员，CCF集成电路设计专委和容错计算专委执行委员，BESIII和LHCB国际合作组成员。

主要从事高能效高可靠集成电路设计，包括高能效专用加速器芯片设计、抗辐射数模混合集成电路设计等，具有丰富的流片工程经验。主持国家级、省部级等纵向项目10项，主持企事业委托横向项目10项，成果转化3项。以第一或通讯作者身份在IEEE JSSC等集成电路领域顶级或权威期刊发表SCI论文30余篇，在IEEE CICC等国际会议发表论文10余篇，获得授权国家发明专利20余项。

指导本科生以第一作者发表SCI论文5篇，指导本科生国家级、省级SIT项目4项，指导本科生获得全国大学生集成电路创新创业大赛全国二等奖3项。指导研究生获得中国电子学会集成电路奖学金一等奖，指导研究生获得中国研究生创芯大赛企业专项奖一等奖。

欢迎有志于从事集成电路设计的博士和硕士加入我的团队！

重点方向：高能效数字集成电路设计（算法、架构、芯片、系统），高可靠模拟集成电路设计（电源管理、传感器接口芯片）

联系方式：zjchen@hnu.edu.cn

2017年07月-2019年12月：湖南大学，物理与微电子科学学院，助理教授

2020年01月-2022年03月：湖南大学，物理与微电子科学学院，副教授

2022年04月-2025年08月：湖南大学，半导体学院（集成电路学院），副教授

2025年09月-至今：湖南大学，半导体学院（集成电路学院），教授

2008年09月-2012年07月：湘潭大学，微电子学专业，工学学士

2012年09月-2017年07月：中国科学院上海微系统与信息技术研究所，微电子学与固体电子学，工学博士

[1]国家自然科学基金面上项目

[2]国家自然科学基金青年项目

[3]湖南省自然科学基金面上项目

[4]湖南省自然科学基金青年项目

[1]Qiaoyi Fu, Yifeng Zhou, Qinchao Cai, Wenzhen An, Renlong Li, Lei Liao*, Zhuojun Chen*, A 28-nm Fully-Integrated Reconfigurable CMOS Simulated Coherent Ising Machine with Dynamic Pump-Rate Control and Spin Freezing, IEEE Journal of Solid-State Circuits, accepted.

[2]Wenzhao Lv, Dan Ye, Pengxu Ren, Kai Xu, Mingyang Qin, Zhonghua Wang, Chao Jiang*, Zhuojun Chen*, A 30. 7.6-ppm/°C Frequency Reference From -40 ℃ to 125 ℃ with Series–Parallel Double-Tracking for Second-Order Compensation and Process-Variation Tolerance, 2026 IEEE Custom Integrated Circuits Conference (CICC), 2026. (Best Paper Finalists)

[3]Wenzhao Lv, Pengxu Ren, Dan Ye, Chao Jiang*, Zhuojun Chen*, A 0.95-ppm/°C Voltage Reference with Second-Order Core-Injection Sub-Ranging Compensation, IEEE Transactions on Circuits and Systems II: Express Briefs, 2026, 73(5), 543-547.

[4]Wenzhao Lv, Yu Sun, Jin Xu, Dan Ye, Rongmei Chen, Lei Liao*, Zhuojun Chen*, A 0.5-ppm/℃ Voltage Reference With Sub-Ranging On-Chip Self-Heating and Second-Order Compensation in 65-nm CMOS, IEEE Journal of Solid-State Circuits, accepted.

[5]Yifeng Zhou, Xin Hao, Qinchao Cai, Lei Liao*, Zhuojun Chen*, A Potts Machine with Coefficient Reuse Strategy and Successive Boundary Approximation Annealing for Multi-State Combinatorial Optimization, IEEE Journal of Solid-State Circuits, 2026, 61(3), 990-1000.

[6]Yilun Cai, Dan Ye, Wenzhao Lv, Zhuojun Chen*, A High-Efficient GaN Driver With Hybrid Adaptive Dead-Time Control and Peak Delay Control for Synchronous Buck Converter, IEEE Transactions on Power Electronics, 2026, 41(1), 279-290.

[7]Wenzhao Lv, Yilun Cai, Ying Wang, Zhuojun Chen*, A 1.31-ppm/℃ CMOS Voltage Reference With Second-Order and Sub-Ranging Compensation, IEEE Transactions on Circuits and Systems I: Regular Papers, 2025, 72(11), 6378-6388.

[8]Jinrong Zhou, Renlong Li, Yifeng Zhou, Qiaoyi Fu, Zhuojun Chen*, A SRAM-based In-Memory Accelerator Featuring Complete SAT Solving and CAM Operations for Efficient Network Transmission, IEEE Transactions on Circuits and Systems II: Express Briefs, 2025, 72(11), 1785-1789.

[9]Yifeng Zhou, Xin Hao, Qinchao Cai, Lei Liao*, Zhuojun Chen*, A Reconfigurable Potts Machine with Successive Boundary Approximation Annealing for Solving Combinatorial Optimization Problems, 2025 IEEE Custom Integrated Circuits Conference (CICC), 2025. (Best Paper Finalists)

[10]Jinzhe Tan, Renlong Li, Ding Ding, Zhuojun Chen*, Total Ionizing Dose Effects of SRAM-Based Compute-In-Memory Macro With Analog MAC Operations, IEEE Transactions on Nuclear Science, 2025, 72(2): 147-153.

[11]Yifeng Zhou, Guocheng Su, Jinrong Zhou, Lei Liao*, Zhuojun Chen*, A Compute-in-Memory Annealing Processor with Interaction Coefficient Reuse and Sparse Energy Computation for Solving Combinatorial Optimization Problems, IEEE Journal of Solid-State Circuits, 2024, 59(9), 3094-3105.

[12]Chonghao Chen, Jiang Xu, Zhuojun Chen*, Single-Event Burnout Effects of Complementary LDMOS Devices in High-Voltage Integrated Circuits, IEEE Transactions on Device and Materials Reliability, 2024, 24(3), 401-406.

[13]Guofeng Li, Shuo Zhang, Longjing Yin, Zhuojun Chen*, Design and Implementation of a High-Voltage Radiation-Hard Hall Switch Sensor, IEEE Transactions on Nuclear Science, 2024, 71(4): 888-894.

[14]Jiang Xu, ZeYu Lei, ChenChen Zhang, Xin Wan, Zhuojun Chen*, A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process, IEEE Transactions on Device and Materials Reliability, 2024, 24(1): 105-111.

[15]Zhuojun Chen, Wenhao Yang, et al., Improving Radiation Reliability of SRAM-based Physical Unclonable Function with Self-Healing and Pre-Irradiation Masking Techniques, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2024, 32(2): 372-381.

[16]Zhuojun Chen, Ming Wu, et al., PUF-CIM: SRAM-based Compute-in-Memory with Zero Bit-Error-Rate Physical Unclonable Function for Lightweight Secure Edge Computing, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023, 31(8): 1234-1247.

[17]Zhuojun Chen, Wenshang Lee, et al., A Lightweight and Machine-Learning-Resistant PUF Using Obfuscation-Feedback-Shift-Register, IEEE Transactions on Circuits and systems-II, 2022, 69(11): 4543-4547.

[18]Zeyu Lei, Chenchen Zhang, Ming Wu, Xuming Zou, Junzheng Yan, Zhuojun Chen*, Comprehensive study of the radiation effects on the LDMOS transistors, Microelectronics Reliability, 2022, 139: 114793.

[19]Zhuojun Chen*, Chenchen Zhang, Ming Wu, Teng Wang, Yun Zeng, Xin Wan, Hu Jin, Jun Xu, Minghua Tang, Analysis and Mitigation of Single-Event Gate Rupture in VDMOS with Termination Structure, IEEE Transactions on Nuclear Science, 2021, 68(6): 1272-1278.

[20]Zhuojun Chen, Judi Zhang, Shuangchun Wen, Ya Li, Qinghui Hong, Competitive Neural Network Circuit Based on Winner-Take-All Mechanism and Online Hebbian Learning Rule, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2021, 29(6): 1095-1107.

[21]Wangze Ni, Zhen Dong, Bairun Huang, Yichi Zhang, Zhuojun Chen*, A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor, IEEE Access, 2021, 46709-46716.

[22]Zhuojun Chen*, Ding Ding, Yemin Dong, Yi Shan, Yun Zeng, Jiantou Gao, Design of a High-performance Low-cost Radiation-Hardened Phase-Locked Loop for Space Application, IEEE Transactions on Aerospace and Electronic Systems, 2020, 56 (5): 3588-3598.

[23]Ming Wu, Chenchen Zhang, Wei Peng, Jun Xu, Hu Jin, Yun Zeng, Zhuojun Chen*, A Radiation-Hardened Dual-Direction SCR Based on LDMOS for ESD Protection in the Extreme Radiation Environment, IEEE Transactions on Nuclear Science, 2020, 67 (4): 708-715.

[24]Ming Wu, Wenzhao Lu, Chenchen Zhang, Wei Peng, Yun Zeng, Hu Jin, Jun Xu, Zhuojun Chen*, The Impact of Radiation and Temperature Effects on Dual-Direction SCR Devices for on-Chip ESD Protections, Semiconductor Science and Technology, 2020, 35(4): 045016.

[25]Zhuojun Chen*, Wenzhao Lu, Ming Wu, Wei Peng, Yuanyuan Hu, Bo Li, Yun Zeng, Xiangliang Jin, A compact LDMOS DDSCR for HV ESD protections with high robustness and reliability, Solid-State Electronics, 2019, 161, 107640.

[26]Shuyun Zheng, Yun Zeng, Zhuojun Chen*, Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors, IEEE Access, 2019, 79989-79996.

[27]Zhuojun Chen*, Ding Ding, Yemin Dong, Yi Shan, Shuxing Zhou, Yuanyuan Hu, Yunlong Zheng, Chao Peng, Rongmei Chen, Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop, IEEE Transactions on Nuclear Science, 2018, 65(4): 997-1004.

[28]Zhuojun Chen*, Min Lin, Ding Ding, Yunlong Zheng, Zehua Sang, Shichang Zou, Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation, IEEE Transactions on Nuclear Science, 2017, 64(1): 106-112.

[29]Zhuojun Chen*, Min Lin, Yunlong Zheng, Zuodong Wei, Shuigen Huang, Shichang Zou, Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology , IEEE Transactions on Nuclear Science, 2016, 63(4): 2402-2408.

[30]Zhuojun Chen, Yongguang Xiao, Minghua Tang*, Ying Xiong, Jianqiang Huang, Jiancheng Li, Xiaochen Gu, Yichun Zhou, Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs , IEEE Transactions on Electron Devices, 2012.12, 59(12): 3292-3298.

[31]Yongguang Xiao, Zhuojun Chen, Minghua Tang*, Zhenhua Tang, Shaoan Yan, Jiancheng Li, Xiaochen Gu, Yichun Zhou, Xiaoping Ouyang, Simulation of Electrical Characteristics in Negative Capacitance Surrounding-Gate Ferroelectric Field-Effect Transistors , Applied Physics Letters, 2012.12.17, 101(25).